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ZZ5185

    The ZZ5185 is a fully matched, a highly efficient, wide instantaneous bandwidth power amplifier (PA) with high gain and linearity. The PA is designed for FDD and TDD 4G LTE and 5G systems operating in the 2496 MHz to 2690 MHz band. The device is manufactured using an advanced InGaP HBT MMIC technology offering stateof-the-art reliability, temperature stability, and ruggedness. The self-contained 5 mm x 5 mm x 0.85 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50Ω system.


  • Parameters

    The ZZ5185 is a fully matched, a highly efficient, wide instantaneous bandwidth power amplifier (PA) with high gain and linearity. The PA is designed for FDD and TDD 4G LTE and 5G systems operating in the 2496 MHz to 2690 MHz band. The device is manufactured using an advanced InGaP HBT MMIC technology offering stateof-the-art reliability, temperature stability, and ruggedness. The self-contained 5 mm x 5 mm x 0.85 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50Ω system.


InGaP/GaAs HBT Technology, Fully Integrated, 3-Stage Power Amplifier

Wide instantaneous signal bandwidth: 100 MHz

High-efficiency: 28% PAE @ +28 dBm

High linearity: +28 dBm with < -50 dBc ACLR with DPD (100 MHz NR, 8.5 dB PAR signal)

Small Signal Gain: 33 dB

Single supply voltage: 5.0 V

Enable On/Off function: PAEN = 1.5 to 3.3 V

50Ω Input & Output Internally Matched

LGA 16-pin, 5 x 5 x 0.85 mm package, RoHS Compliant

FDD and TDD 4G LTE and 5G systems

Supports 3GPP Bands 7,38, and 41

Customer Premises Equipment (CPE)

Driver amplifier for micro-base and macro-base stations

Enterprise small cell and massive MIMO


ZZ5185
The ZZ5185 is a fully matched, a highly efficient, wide instantaneous bandwidth power amplifier (PA) with high gain and linearity. The PA is designed for FDD and TDD 4G LTE and 5G systems operating in the 2496 MHz to 2690 MHz band. The device is manufactured using an advanced InGaP HBT MMIC technology offering stateof-the-art reliability, temperature stability, and ruggedness. The self-contained 5 mm x 5 mm x 0.85 mm surface mount package incorporates RF matching networks optimized for output po
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5G base station

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Base station equipment

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Hotline:

13826950629    

Email:

sherry_chen@imicrochip.com.cn

Address:

Room 801 and 802, Building 25, Phase 3, Yian Science and Technology Innovation Park, No. 23, Gangkou Road, Pingzhou Sanshan, Guicheng Sub-district, Nanhai District, Foshan City

Copyright ©2026 All Rights Reserved. All rights reserved by Foshan Zhenzhi Weixin Technology Co., LTD. Yue ICP No. 2025514614

 

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Hotline:13826950629 

E-mail:sherry_chen@imicrochip.com.cn

Address:Room 801 and 802, Building 25, Phase 3, Yian Science and Technology Innovation Park, No. 23, Gangkou Road, Pingzhou Sanshan, Guicheng Sub-district, Nanhai District, Foshan City


Copyright ©2026 All Rights Reserved. All rights reserved by Foshan Zhenzhi Weixin Technology Co., LTD. Yue ICP No. 2025514614
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