产品详情
Products Details
产品详情
The ZZ5185 is a fully matched, a highly efficient, wide instantaneous bandwidth power amplifier (PA) with high gain and linearity. The PA is designed for FDD and TDD 4G LTE and 5G systems operating in the 2496 MHz to 2690 MHz band. The device is manufactured using an advanced InGaP HBT MMIC technology offering stateof-the-art reliability, temperature stability, and ruggedness. The self-contained 5 mm x 5 mm x 0.85 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50Ω system.
The ZZ5185 is a fully matched, a highly efficient, wide instantaneous bandwidth power amplifier (PA) with high gain and linearity. The PA is designed for FDD and TDD 4G LTE and 5G systems operating in the 2496 MHz to 2690 MHz band. The device is manufactured using an advanced InGaP HBT MMIC technology offering stateof-the-art reliability, temperature stability, and ruggedness. The self-contained 5 mm x 5 mm x 0.85 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50Ω system.
InGaP/GaAs HBT Technology, Fully Integrated, 3-Stage Power Amplifier
Wide instantaneous signal bandwidth: 100 MHz
High-efficiency: 28% PAE @ +28 dBm
High linearity: +28 dBm with < -50 dBc ACLR with DPD (100 MHz NR, 8.5 dB PAR signal)
Small Signal Gain: 33 dB
Single supply voltage: 5.0 V
Enable On/Off function: PAEN = 1.5 to 3.3 V
50Ω Input & Output Internally Matched
LGA 16-pin, 5 x 5 x 0.85 mm package, RoHS Compliant
FDD and TDD 4G LTE and 5G systems
Supports 3GPP Bands 7,38, and 41
Customer Premises Equipment (CPE)
Driver amplifier for micro-base and macro-base stations
Enterprise small cell and massive MIMO
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5G基站
5G基站
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（020）31137084
邮箱：
chenz@imicrochip.com.cn
地址：
佛山市南海区桂城街道平洲三山港口路23号宜安科创园3期25座801、802室
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