产品详情
Products Details
产品详情
The ZZ5186 is a fully matched, a highly efficient, wide instantaneous bandwidth power amplifier (PA) with high gain and linearity. The PA is designed for FDD and TDD 4G LTE and 5G systems operating in the 3300MHz to 3600 MHz band. The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The self-contained 5 mm x 5 mm x0.85 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
The ZZ5186 is a fully matched, a highly efficient, wide instantaneous bandwidth power amplifier (PA) with high gain and linearity. The PA is designed for FDD and TDD 4G LTE and 5G systems operating in the 3300MHz to 3600 MHz band. The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The self-contained 5 mm x 5 mm x0.85 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
InGaP/GaAs HBT Technology, Fully Integrated, 3-Stage Power Amplifier
Wide instantaneous signal bandwidth: 100 MHz
High-efficiency: 25.5% PAE @ +28 dBm
High linearity: +28 dBm with < -50 dBc ACLR with DPD (100 MHz NR, 8.5 dB PAR signal)
Small Signal Gain: 31 dB
Single supply voltage: 5.0 V
Enable On/Off function: PAEN = 1.5 to 3.3 V
50Ω Input & Output Internally Matched
LGA(16-pin, 5 x 5 x 0.85 mm) package, RoHS Compliant
FDD and TDD 4G LTE and 5G systems
Supports 3GPP Bands 22, 42, n77 and n78
Customer Premises Equipment (CPE)
Driver amplifier for micro-base and macro-base stations
Enterprise small cell and massive MIMO
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5G基站
5G基站
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（020）31137084
邮箱：
chenz@imicrochip.com.cn
地址：
佛山市南海区桂城街道平洲三山港口路23号宜安科创园3期25座801、802室
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